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joi, 16 aprilie 2009

Schema Amplificator MosFet - 25W

Circuit diagram:

25 Watt Amplifier

Parts:

R1,R4 = 47K

1/4W Resistors

R2 = 4K7 1/4W Resistors
R3 = 1K5 1/4W Resistors
R5 = 390R 1/4W Resistors
R6 = 470R 1/4W Resistors
R7 = 33K 1/4W Resistors
R8 = 150K 1/4W Resistors
R9 = 15K 1/4W Resistors
R10 = 27R 1/4W Resistors
R11 = 500R

1/2W Trimmer Cermet

R12,R13,R16 = 10R 1/4W Resistors
R14,R15 = 220R 1/4W Resistors
R17 = 8R2 2W Resistor
R18 = R22 4W Resistor (wirewound)
C1 = 470nF 63V Polyester Capacitor
C2 = 330pF 63V Polystyrene Capacitor
C3,C5 = 470΅F 63V Electrolytic Capacitors
C4,C6,C8,C11 = 100nF 63V Polyester Capacitors
C7 = 100΅F 25V Electrolytic Capacitor
C9 = 10pF 63V Polystyrene Capacitor
C10 = 1΅F 63V Polyester Capacitor
Q1-Q5 = BC560C 45V100mA Low noise High gain PNP Transistors
Q6 = BD140 80V 1.5A PNP Transistor
Q7 = BD139 80V 1.5A NPN Transistor
Q8 = IRF532 100V 12A N-Channel Hexfet Transistor
Q9 = IRF9532 100V 10A P-Channel Hexfet Transistor
 
Power supply circuit diagram:

Power supply


Parts:

R1 = 3K3 1/2W Resistor
C1 = 10nF 1000V Polyester Capacitor
C2,C3 = 4700΅F 50V Electrolytic Capacitors
C4,C5 = 100nF 63V Polyester Capacitors
D1 200V 8A Diode bridge
D2 5mm. Red LED
F1,F2 3.15A Fuses with sockets
T1 220V Primary, 25 + 25V Secondary 120VA Mains transformer
PL1 Male Mains plug
SW1 SPST Mains switch


Notes:

  • Can be directly connected to CD players, tuners and tape recorders. Simply add a 10K Log potentiometer (dual gang for stereo) and a switch to cope with the various sources you need.

  • Q6 & Q7 must have a small U-shaped heatsink.

  • Q8 & Q9 must be mounted on heatsink.

  • Adjust R11 to set quiescent current at 100mA (best measured with an Avo-meter in series with Q8 Drain) with no input signal.

  • A correct grounding is very important to eliminate hum and ground loops. Connect in the same point the ground sides of R1, R4, R9, C3 to C8. Connect C11 at output ground. Then connect separately the input and output grounds at power supply ground.


Technical data:

Output power: well in excess of 25Watt RMS @ 8 Ohm (1KHz sinewave)

Sensitivity: 200mV input for 25W output

Frequency response: 30Hz to 20KHz -1dB

Total harmonic distortion @ 1KHz: 0.1W 0.014% 1W 0.006% 10W 0.006% 20W 0.007% 25W 0.01%
Total harmonic distortion @10KHz: 0.1W 0.024% 1W 0.016% 10W 0.02% 20W 0.045% 25W 0.07%

Unconditionally stable on capacitive loads


Read More......

Schema Amplificator Mosfet-70 W

MOSFET Integrated Amplifier

This is my first attempt at building a "proper" amplifier for general use, as opposed to the Mixer-Amplifier I had made earlier. This amp was made without too much concern to cost, hence several of the approaches I've taken may be sub-optimal from the cost perspective.

Overview

  • Microcontroller-controlled preamplifier, with infrared remote control capability. Volume and other settings stored in battery-backed RAM.
  • LCD Display for volume, etc.
  • Three general-purpose line-level inputs, one tape input, one tape output.
  • 70W MOSFET-based stereo power amplifier.
  • Headphone output.
  • +/-38V at 4A and +/-5V at 500mA power supplies.

Microcontroller Unit (MCU)

This forms the central control secion of the amplifier. It is based on a PIC16F84A microcontroller from Microchip. The microcontroller is connected to the following peripherals:
  • LM1973 μPot digital audio attenuator.
  • DS1302 real-time clock (RTC).
  • 2x16 character mode LCD through a 74HC163 shift register.
  • CD4094 latched shift register, acting as general purpose output ports. These ports are connected to CD4052 analog multiplexers which funcion as input source selectors, tape monitor selectors and Bass Boost mode selectors. It's also connected to the LCD panel's register-select pin and the speaker muting relay driver.
  • TSOP1736 IR receiver module.
  • Three-button keypad.
  • Headphone socket swtch, used to indicate to the MCU that headphones are plugged in, and to mute the main speakers.
The 16F84 is cheap, fast and has just the right amount of memory for the task. It does not have enough I/O ports for all functions in this application, hence I had to use serial "port extenders": using shift registers to store data sent out over an SPI-Bus style interface. SPI bus needs to be used anyway, to communicate with the RTC and the μPots.
Controller Circuit
MOSFET Integrated Amp Controller Circuit
Connector JP2 goes to the μPot on the preamplifier board. The LCD connects through a standard Berg header. Some modules have a 2x8 connector in place of a 1x16, I'm not sure of the pinouts.
The 16F84 runs off a 4MHz crystal, so it can execute roughly 1 million instructions per second: more than enough for the task. It has 1k of internal Flash program memory, 64 bytes EEPROM and 68 bytes RAM. The software is written in the 16F84's assembly language, assembled with MPLAB and downloaded to the target through a home-made 16F84 programmer. The keyboard port, connected to RB7-RB4 is also used as the in-systep programming (ISP) port. To do this, the MCLR pin is also brought out to the connector. The only disadvantage with this is that programming for the keypad was difficult; you have to remove the programmer and re-connect the keypad before you could test the new changes. The software (.ASM file) is in the file preamp_ctl.zip (9kB, version 1.3). I've tried to comment parts of the code, but it's not complete. The code currently has no known bugs.
I originally intended the speaker muting relay and tape monitor ports to go to three general-purpose LEDs, hence the series resistors. They might, however, be a good idea, especially with the μPot connection, as it will serve to increase risetime, and reduce the signal coupling between the audio signals and the digital control signals.
The DS1305 RTC has a 32 kHz timekeeping crystal. It's main use is for it's 96 bytes of battery-backed NVRAM, which are used to store the current volume, input source and bass-boost selections, even when the power is removed. I could have used the PIC's EEPROM for this, but it has a limited number of write cycles. I'd either have to have a brown-out detection circuit trigger an interrupt to make the PIC write to EEPROM, or live with a limited-lifetime amplifier. Using NVRAM is easier. The MCU talks to the RTC through an SPI bus (SCLK, SDI and SDO pins). The DS1305 includes a programmable trickle-charger which can be configured through the SPI bus.
IC2 is a CD4094 shift register and latch. Data from the MCU is clocked in serially through the D and CLK pins. When the strobe pin STR receives a rising edge, the data from the shift register is internally latched and fed to the outputs. This ensures that the outputs do not change state when the MCU clocks data into or out of any of the other devices on the SPI bus (RTC, μPot, etc). IC3 is an 8-bit SIPO shift register. It behaves like the 4094, but there is no latch. This is because its outputs drive the LCD module, which has an internal latch.

Preamplifier

The Preamplifier section uses an opamp-based circuit to provide a total of +6dB gain, Volume control and two-step Bass Boost. Opamps used are the MAX414 low voltage, low-noise opamps.
Preamplifier Input Stage
MOSFET Integrated Amp Preamplifier Input stage.
The first stage (IC1A and IC1B) uses a non-inverting amplifier configuration. Looking at the channel based on IC1B, R13 and C8 provide RF suppresion, C11 and R8 behave as an LPF, and sets the input impedance of the preamp at 100k. R10 and R15 set the gain of this stage at 2 (6dB). C1, C5, C6 and C10 provide supply bypassing. Mount C1 and C10 near the IC.
In addition to the input stage, this diagram includes a pair of buffers (IC1C and IC1D) used at the output of the μPot, which has a high output impedance.
Preamplifier μPot
MOSFET Integrated Amp μPot
The LM1973 μPot is the digital volume control chip used in this project. It contains three digitally adjustable audio attenuators with a 78dB adjustment range, and > 100dB mute. It accepts settings changes via an SPI-bus compatible interface. In the circuit, JP5 connects to JP2 on the controller board. It has one distinct advantage over similar devices made by Dallas Semiconductor, etc. in that it uses a split supply. Thus, no exta coupling capacitors are needed to interface these to opamps.
Preamplifier Bass Boost
MOSFET Integrated Amp Bass Boost and Driver
The Bass Boost section provides two switchable levels of Bass enhancement. The input audio is first low-pass filtered by a second-order LPF, whose cutoff frequency is 100Hz. The LPF is built around IC2C and IC2DThe output of the LPF is given to a MUX based on a CD4052. This mux can choose between ground, an attenuated version of the LPF, and the full LPF output. The selected MUX output is summed with the original audio, yeilding a Bass Boosted signal. The outputs of this section are fed to the final power stage.
The trimpots R21 and R25 are used to set the bass level for the low-bass mode. This is usually not just the midpoint (50%) level, it's somewhere like 70%. It can be adjusted to personal taste. IC2A and IC2B act as the summing amplifier and output stage driver. 100Ω resistors R11 and R16 are used to prevent the load capacitance from causing instability in IC2A and IC2B. 2μF coupling capacitance is provided.

Input Selector

Input Selector
MOSFET Integrated Amp Input Selector
The Input Selector is built around two CD4052 analog multiplexers. IC2 is used to select the input source (CD/AUX1/AUX2) and IC3 is used to choose either the source selected above, the tape monitor or the tape monitor after noise reduction using National Semiconductor's LM1894 Dynamic Noise Reduction (DNR) chip. The DNR section is built around IC1, and is discussed on this page. JP1-3 are the source inputs, JP5 is the tape monitor input. R1 adjusts the DNR level. This is adjusted while listening to a soft passage to just above the point where the quietest part of the programme material "drops out". JP4 and JP7 come from the MCU board and are used to select the inputs and tape monitor. JP8 is the tape-out port, and has the currently selected input. It is not buffered, but it should be. JP6 is the connection to the preamp board (both power and signal). 1MΩ resistors are provided to ensure that the input capacitors of the preamp do not cause popping when inputs are switched from one source to the other.

Headphone Amplifier

Headphone Amplifier
MOSFET Integrated Amp Headphone Amplifier
The headphone amplifier is based on National Semiconductor's LM4880 headphone amplifier chip. It reduces the size of the headphone amp used.

Power Amplifier

Power Amplifier
MOSFET Integrated Amp Power Amplifier
This circuit is from David White's article in Electronics World (August 2001). It uses inexpensive HexFet™ Power MOSFETs as output devices. Since their transconductance is low, the rest of the design is geared towards producing maximum open-loop gain. Overall Negative Feedback is used to set the gain to 27dB and to reduce the distortion.
The input devices used (2SA970) are low-noise, high gain PNP devices. They have poor Vce(max), so their supply voltage is reduced using a simple Zener diode regulator built using R3, ZD1 and C3. T1 is used as a current source. The author of the original EW article mentioned using a plain gate-source connected JFET, which is selected to produce 1mA current. At Rs. 25 a pop, I was not about to do this with BF245s. Besides, the current for my G-S connected BF245s is around 7mA. Insert a resistance in series with the source to reduce the current. Since the source-drain current is dependent on the manufacturing process, you should select the resistor for each BF245 in a multiple-amp. system. The value should be selected for 1mA current. If required, use a 1k pot here.
C1 forms the input blocking cap, but is shorted with a jumper because the blocking capacitor is already present on the preamp board. R1 and R2, together with C2 form an RF suppression network at the input. R2 sets the input impedance at 47kΩ. R4 and R5 are the collector loads for T2 and T3. I found that using a current mirror did not improve the THD rating of the amp (at least in Spice), so I dropped that idea. ZD2 (A 2.7V Zener), C4 and C5 prevent the base of T4 from getting beyond 2.7V in the event of amplifier clipping, output device failure, etc.
T9 and T10 forms the voltage amplifer stage (VAS). The original circuit recommended using 2SD756 transistors, which I couldn't find. The BF420 is similar, with slightly lower beta. It's a differential stage, with a constant current source formed by T6, T7, LD1, LD2, R10 and R11. A Wilson current mirror, formed by T4, T5, D1, R8 and R9 acts as the collector load for T9 and T10, ensuring maximum gain. T8, R13-15, RV1 D2 and D3 form the voltage offset between the gates of the output devices, to bias them into Class AB operation. RV1 sets the bias current. T8 should be in thermal contact with the output devices. R10 and R19 are used to limit the current drawn by the gate capacitance of the output devices. C6 and C7 form the Miller capacitors. Remember that you will need to change this if any of the transistors are substituted with different ones. I used styroflex capacitors here. R16, R17, C8 and C10 act as LPFs to filter the supply to the VAS and input stage.
D4, D5, ZD3 and ZD4 form a rudimentary short circuit protection for the output MOSFETs. It will limit the current long enough for the supply fuses to blow. C11, C12, C14 and C15 are supply decoupling capacitors. C12 anc C15 should be placed near the MOSFET drains. C13 and R20 form the Zobel network, used to compensate for the speaker coil's rising impedance with frequency. L1 is a 10 ohm, 1W resistor with around 10 turns of enamelled wire wrapped around it, connected in parallel. This is used to prevent the speaker cable capacitance from causing amplifier instability. The circuit shown uses two paralleled MOSFETS, although this is not required; it just gives addiional stability. It may be necessary to insert 0.1 or 0.22 ohm 5W resistors in series with each source before paralleling the MOSFETs, to prevent current hogging.
R7 and R6 form the feedback network. These set the gain at 27dB. If oscillation is a problem, R7 can be bypassed with a 100pF or so capacitor.
Note the separation of the signal and power grounds in the circuit. The input stage is referenced to the signal ground GNDA. The decoupling capacitors on the supply current are referenced to the power ground (GND). Also note that the output Zobel network is referenced to a third ground labeled GNDIO. GNDIO must be connected to the speaker connection posts' ground terminals, which are then wired directly to the power supply via a thick ground lead. A jumper is provided between GNDA and GND. I found that this jumper had to be cut to give hum-free operation, but your configuration may yield different results.

Power Supply

The power supply for the amplifier has two sections: the low-voltage and high voltage sections. The high voltage section produces an unregulated +/- 38V for the power amplifier. The low voltage section provides +/- 5V for the analog sections (preamp, input selector, etc.) and +5V for the digital sections (MCU, LCD display, etc). It uses a custom-wound transformer, with 30-0-30 @ 4A main windings and 12-0-12 @ 500mA auxiliary windings. A third 0-12 winding is provided for driving the speaker muting relay.
Power Supply
MOSFET Integrated Amp Power Supply
The input voltage (erroneously marked "30V in") connects to a 35A bridge rectifier's + and - terminals. The Bridge's AC terminals go to the extreme ends of a 30-0-30, 4A transformer. The transformer's center tap connects to the middle pin (X1-3). The fuses I used are 5A slow-blow types. The connector labeled JP1 connects to the transformer's auxiliary (12-0-12) windings. The 100nF capacitors C7-C12 should be placed near their respective regulators. C13-15 are tantalum capacitors. Three indicator LEDs are provided to act as indication that one of the supplies is short circuited. They also behave as a minimum load for the regulators.

Speaker Muting

Speaker Muting
MOSFET Integrated Amp Speaker Muting
The speaker muting circuit presented here uses the MCU to switch on the speakers after a short delay. The amount of delay can be software programmed. At switch-off, the local supply voltage (derived from the transformer's auxiliary 0-12 winding) collapses very quickly, switching off the relay. The headphone jack includes a switch for speaker muting, this is sensed by the MCU (through port RB7), which then switches off the speaker. The circuit's input (J1.2) connects to the MCU's speaker mute relay pin (JP5.3, on the MCU board). A logic high at this pin switches on the relay, and hence the speakers. The relays used should have a 10A DC contact rating, otherwise serious damage can result. The Zener diode used (ZD1) is a 12V type.

Construction

The various PCBs were built on Veroboard, excepting for the power amplifier. These were made on FR4 PCBs, with a good ground plane, etc. The output devices were laid flat on the board, with an aluminium L-section between the devices and the board. This L-section is then bolted onto the heatsink.
The amp was built into a standard amplifier case (from Dexa). It, however, needed significant modification for this amplifier. A large hole had to be cut in the rear to insert the heatsink. Rectangular hole was made in the front panel to insert the LCD panel. The tape selector slots were used to implement the menu and up/down keys. One of the other switch slots was used for the infrared sensor. The cutouts for volume/balance/tone pots were used for front-panel input (RCA jacks), speaker active LED and headphone socket.

http://wiredworld.tripod.com



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60W MosFet Audio Amplifier-Schema Amplificator MosFet

High Quality, powerful unit: 90W into 4 Ohm load

Also suited as guitar or bass amplifier


Circuit diagram:

60 Watt MosFet Amplifier

Parts:

R1______________47K   1/4W Resistor
R2_______________4K7 1/4W Resistor
R3______________22K 1/4W Resistor
R4_______________1K 1/4W Resistor
R5,R12,R13_____330R 1/4W Resistors
R6_______________1K5 1/4W Resistor
R7______________15K 1/4W Resistor
R8______________33K 1/4W Resistor
R9_____________150K 1/4W Resistor
R10____________500R 1/2W Trimmer Cermet
R11_____________39R 1/4W Resistor
R14,R15___________R33 2.5W Resistors
R16_____________10R 2.5W Resistor
R17_______________R22 5W Resistor (wirewound)

C1_____________470nF 63V Polyester Capacitor
C2_____________470pF 63V Polystyrene or ceramic Capacitor
C3______________47µF 63V Electrolytic Capacitor
C4,C8,C9,C11___100nF 63V Polyester Capacitors
C5______________10pF 63V Polystyrene or ceramic Capacitor
C6_______________1µF 63V Polyester Capacitor
C7,C10_________100µF 63V Electrolytic Capacitors

D1___________1N4002 100V 1A Diode
D2_____________5mm. Red LED

Q1,Q2,Q4_____MPSA43 200V 500mA NPN Transistors
Q3,Q5________BC546 65V 100mA NPN Transistors
Q6___________MJE340 200V 500mA NPN Transistor
Q7___________MJE350 200V 500mA PNP Transistor
Q8___________IRFP240 200V 20A N-Channel Hexfet Transistor
Q9___________IRFP9240 200V 12A P-Channel Hexfet Transistor

Power supply circuit diagram:

60 Watt MosFet Amplifier Power Supply

Parts:

R1_______________3K9   1W Resistor

C1,C2_________4700µF 63V Electrolytic Capacitors (See Notes)
C3,C4__________100nF 63V Polyester Capacitors

D1_____________400V 8A Diode bridge
D2_____________5mm. Red LED

F1,F2__________4A Fuses with sockets

T1_____________230V or 115V Primary, 30+30V Secondary 160VA Mains transformer

PL1____________Male Mains plug

http://www.redcircuits.com/Page100.htm

SW1____________SPST Mains switch

Comments:

To celebrate the hundredth design posted to this website, and to fulfil the requests of many correspondents wanting an amplifier more powerful than the 25W MosFet, a 60 - 90W High Quality power amplifier design is presented here.
Circuit topology is about the same of the above mentioned amplifier, but the extremely rugged IRFP240 and IRFP9240 MosFet devices are used as the output pair, and well renowned high voltage Motorola's transistors are employed in the preceding stages.
The supply rails voltage was kept prudentially at the rather low value of + and - 40V. For those wishing to experiment, the supply rails voltage could be raised to + and - 50V maximum, allowing the amplifier to approach the 100W into 8 Ohm target: enjoy!
A matching, discrete components, Modular Preamplifier design is available here: Modular Audio Preamplifier.

Notes:

  • In the original circuit, a three-diode string was wired in series to R10. Two of these diodes are now replaced by a red LED in order to achieve improved quiescent current stability over a larger temperature range. Thanks to David Edwards of LedeAudio for this suggestion.
  • A small, U-shaped heatsink must be fitted to Q6 & Q7.
  • Q8 & Q9 must be mounted on large heatsinks.
  • Quiescent current can be measured by means of an Avo-meter wired in series to the positive supply rail and no input signal.
  • Set the Trimmer R10 to its minimum resistance.
  • Power-on the amplifier and adjust R10 to read a current drawing of about 120 - 130mA.
  • Wait about 15 minutes, watch if the current is varying and readjust if necessary.
  • The value suggested for C1 and C2 in the Power Supply Parts List is the minimum required for a mono amplifier. For optimum performance and in stereo configurations, this value should be increased: 10000µF is a good compromise.
  • A correct grounding is very important to eliminate hum and ground loops. Connect to the same point the ground sides of R1, R3, C2, C3 and C4 and the ground input wire. Connect R7 and C7 to C11 to output ground. Then connect separately the input and output grounds to the power supply ground.

Technical data:

Output power:
60 Watt RMS @ 8 Ohm (1KHz sinewave) - 90W RMS @ 4 Ohm
Sensitivity:
1V RMS input for 58W output
Frequency response:
30Hz to 20KHz -1dB
Total harmonic distortion @ 1KHz:
1W 0.003% 10W 0.006% 20W 0.01% 40W 0.013% 60W 0.018%
Total harmonic distortion @10KHz:
1W 0.005% 10W 0.02% 20W 0.03% 40W 0.06% 60W 0.09%
Unconditionally stable on capacitive loads



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Schema Amplificator Mosfet

High Power, High Fidelity MOSFET Power Amplifier
Rod Elliott (ESP)
Updated 01 Feb 2004


PCB PCBs are available for this project. Click the PCB image for details.
heatsink The ESP heatsink extrusion is ideal for this project if used as a subwoofer amp - click image for details

Introduction

In various parts of The Audio Pages, I have said that I am not a fan of MOSFET power amplifiers. Well, this amp has changed my views, and I consider this to be a "reference" system in all respects. The performance is extremely good, with vanishingly low distortion levels, plenty of power, very wide full power bandwidth, and the "self protecting" nature of the MOSFETs themselves.

This is not to suggest that the amp is indestructible (no amplifier can make that claim successfully), but it is much more tolerant of faults than a bipolar transistor amp, and requires nothing more than a pair of zener diodes to limit the current. Having said that, I would still recommend that you avoid shorted output leads and the like - i.e. Don't push your luck ;-)

One thing that has emerged that is absolutely critical is the PCB layout. The layout of this new amplifier is similar to that used for the P68 Subwoofer amplifier, and this has some major benefits. P68 has no right to sound as good as it does, and although designed for subwoofer use, it has proven during listening and testing to be a very low distortion design - despite the Class-B output stages. All PCB tracks in the input and driver section are as short as possible, minimising the chance of noise pickup from other sections of the circuit.

This new amplifier is designed to be as flexible as possible, with no bad habits. Indeed, it will operate stably with supply voltages as low as +/-5V (completely pointless, but interesting), all the way to the maximum supply voltage of +/-70V. The only change that is needed is to trim the MOSFET bias pot!

With the full supply voltage of +/-70V (which must not be exceeded!), RMS power is around 180W into 8 ohms, or 250W into 4ohms. Short term (or "music") power is typically about 240W into 8 ohms and 380W into 4 ohms. Note that depends to a very great degree on the power supply, and a very robust supply is an absolute requirement for the maximum output.

Since this amp probably has more power than you will normally ever need, even if you do skimp a little on the transformer, the loss will be very small.

It is worth noting that a MOSFET amp will always produce less power than a bipolar transistor version using the same supply voltage. Even using an auxiliary supply will make only a small difference (one reason I elected not to add the extra complexity). A bipolar design using a ±70V supply can be expected to produce something in the order of 270W into 8 ohms, and well over 500W into 4 ohms. The specified MOSFETs have a rated Vds (saturated voltage, Drain to Source) of 12V at full current, and that is simply subtracted from the DC value of the supply voltage. Using the same ±70V supply with a MOSFET amp will give less power than quoted above (see below for measured figures).

Photo
Photograph of Completed Amplifier Board (Early Version)

The photo shows the simplicity of the PCB. The MOSFETs are mounted below the board, and are bolted down in the same way as with the P3A and P68 boards. No other mounting is needed. PCB pins are used as anchor points for the power ground link (the green wire along the front edge), so that the main current carrying tracks were not compromised by running a separate track (which would have required a reduction in size of the positive supply rail).

The entire front-end section is between the electrolytic caps, and is deliberately as compact as possible. This improves performance, by ensuring that there are no long tracks for the input stage, which will pick up noise and can seriously degrade the sound of the amplifier.


Performance Figures

The performance of this amp is such that many measurements are very difficult. Some of the more basic measurements are as shown below, based on my custom made transformers which provide ±65V unloaded ...

ParameterMeasurementConditions
Output Power> 180W<>

> 275W<>
DC Offset<>Typical
Noise<>Unweighted (-54dBV)
THD0.015%No load, 30V RMS output, 1kHz

0.017%8 Ohms, 30V RMS output, 1kHz

0.02%4 Ohms, 30V RMS output, 1kHz
Output Impedance<>1kHz, 4Ω load

<>10kHz, 4Ω load
Frequency Response10Hz to 50kHzAt 1W, -1.5dB
Basic Performance Figures

In particular, the distortion figures show that amp loading causes only very small variations, with any harmonics being predominantly from my audio oscillator. There are no visible or audible high order components to the distortion waveform. Output impedance was measured on a fully built amplifier, including the internal wiring. This entails around 200mm of wire in all (per channel), so the output impedance of the amplifier itself is obviously lower than quoted. For an 8 ohm load, the damping factor at 1kHz is around 800 (8 / 10 milliohms) - completely pointless of course, since any speaker lead will ruin that very quickly.

Noise was measured with inputs open-circuited, and at -54dBV may not look too wonderful, however this figure is very pessimistic. Remember that this is the unweighted measurement, with bandwidth extending to well in excess of 100kHz. Even so, signal to noise ratio (referred to full power) is 86dB unweighted, and the amp is completely silent into typical speakers. Indeed, even connecting a pair of headphones directly to the amp outputs revealed that no noise was audible. Naturally, your methods of construction will differ from mine, and you may not be able to get the same performance.

Intermodulation distortion cannot be measured with the equipment I have available, but I have included a screen capture of the three measurements I took. Most of the harmonic content visible (not that there is a great deal anyway) is present in the two generators I used, and the amplifier contributes virtually nothing.

IMD
1kHz + 2kHz at +30dBV Output (8Ω)

IMD
1kHz + 2kHz at -25dBV Output (8Ω)

IMD
10kHz + 12kHz at +20dBV Output (8Ω)

Click on any of the images above for a full resolution version.


Description

The very first thing you will notice is that I have broken with tradition with this amp, and there are no component values shown. Given the performance of the circuit, and the fact that I have already sold a couple as completed, finished amplifiers, I am not about to give away all my secrets for the design. If you want the component values, you must purchase the PCB. There are no exceptions, so don't ask.

The schematic of the amp is shown in Fig. 1, and it is about as simple as a high power MOSFET amplifier can get - it is considerably simpler than most, but lacks nothing in performance. The circuit diagram belies the ability of the amplifier though, so do not be tempted to think that it cannot perform as well as more complex designs - it does, and exceeds the performance of many (if not most) of them. It will be seen that I elected to use a bootstrap current source rather than an active version - there is negligible cost difference, but I was unwilling to make such a radical change after testing the prototype and being so impressed with the results. (If it ain't broke, don't fix it!)

The front end is a conventional long-tailed pair (LTP) using a current mirror load and an active current sink in the "tail". Interestingly, adding the current mirror made no difference to distortion, but reduced the DC offset to less than 25mV. The improvement was such that I elected to retain the mirror.

In tests thus far (both measurement and listening), I have been unable to detect even a hint of what is commonly referred to as the "MOSFET sound". The relatively high levels of low order distortion and suceptibility to crossover (or "notch" distortion that plague most MOSFET designs are completely missing - indeed, even with zero bias on the MOSFETs, crossover distortion below 10kHz is barely measurable, let alone audible!

Note Carefully:
The most critical aspect of the design is the PCB layout, and it is very doubtful that if you make your own board, that you will get performance even approaching mine. Power output is essentially unchanged, but distortion and stability are achieved by a compact and carefully designed layout for the front end and driver circuits, which minimises any adverse PCB track coupling that causes much higher distortion levels, and may cause oscillation.

This is not a ploy on my part to get people to purchase my PCBs - that has already been taken care of by leaving out the component values. The simple fact is that unless the PCB layout is done with the utmost care, any amplifier can be made to have far greater distortion levels and reduced stability margins than the published figures suggest.

Low Power Version
As shown in the schematics below (figures 1 and 2), the amplifier can be made in high or low power version, and although there is a bit of vacant PCB real estate in the low power design, it is significantly cheaper to make and will be more than sufficient for most constructors. If this version is built (using only 1 pair of MOSFETs), it is essential to limit the supply voltage to +/-56V so that it can drive both 4 and 8 ohm loads without excess dissipation. With this voltage, expect about 100W continuous into 8 ohms, and around 150W into 4 ohms. Naturally, dual MOSFET pairs may be used at this voltage as well, providing much better thermal performance (and therefore cooler operation), far greater peak current capability and slightly higher power. This version may be used at any voltage from +/-25V to +/-56V.

Fig 1
Figure 1 - Standard (Low Power) Version

The MOSFETs used are Hitachi lateral devices, 2SK1058 (N-Channel) and 2SJ162 (P-Channel). These are designed specifically for audio, and are far more linear than the (currently) more common switching devices that many MOSFET amps use. Unfortunately, they are not especially cheap, but their performance in an audio circuit is so much better than vertical MOSFETs, HEXFETs, etc., that there is no comparison. Note that using HEXFETs or any other vertical MOSFET type is not an option. They will fail in this circuit, as it was not designed to use them.

An alternative (and possibly marginally better than the 2S series) is the Exicon ECX10N16 and ECX10P16 (available from Profusion PLC in the UK). These have been used in most of the amps I have built, and they work very well. So potential constructors can verify that the semiconductors are available before purchasing a PCB, this information has now been included. All other parts are quite standard.

High Power Version
The same PCB is used, but has an extra pair of MOSFETs. Since the devices are running in parallel, source resistors are used to force current sharing. Although these may be replaced by wire links, I do not recommend this. This version may be operated at a maximum supply voltage of +/-70V, and will give up to 180W RMS into 8 ohms, and 250W into 4 ohms. Short term (peak) power is around 240W into 8 ohms and 380W into 4 ohms. These figures are very much dependent on your power supply regulation, determined by the VA rating of the transformer, size of filter caps, etc.

Fig 2
Figure 2 - High Power Version

Although not shown, the transistors and MOSFETs are the same in this version as for the low power variant.

As noted above, the PCB is the same for both versions, but for Fig. 2 it is fully populated with 2 pairs of power MOSFETs. The high power version may also be used at lower supply voltages, with a slight increase in power, but considerably lower operating temperatures even at maximum output, and potentially greater reliability.

With both versions, the constructors' page gives additional information, and the schematics there include an enhanced zobel network at the output for greater stability even with the most difficult load. This is provided for on the PCB, and allows the amp to remain stable under almost any conditions.

The entire circuit has been optimised for minimum current in the Class-A driver, while still providing sufficient drive to ensure full power capability up to 25kHz. The slew rate is double that required for full power at 20kHz, at 15V/us, and while it is quite easy to increase it further, this amp already outperforms a great many other amps in this respect, and faster operation is neither required nor desirable.

Note - There are actually two caps marked C5, and two marked C6. This is what is on the PCB overlay, and naturally was not found until it was too late. Since these caps cannot be mixed up, it will not cause a problem.

In both versions of the amp, R7 and R8 are selected to provide 5mA current through the voltage amplifier stage. You will need to change the value to use a different supply voltage ...

R7 = R8 = Vs / 10 (k) (Where Vs is one supply voltage only)
For example, to set the correct current for ±42V supplies ...
R7 = R8 = 42 / 10 = 4.2k (use the next lower standard value - 3.9k)

Construction

As suggested above, I strongly recommend that you purchase the PCB for this amplifier, or you will almost certainly get results that are nowhere near the amp's real ability. The PCB also makes construction a breeze, with everything except the power supply mounted on the board itself. Like many other ESP power amps, the MOSFETs are mounted underneath the board, requriing only two (or four) screws to attach the PCB and output devices. As always, full construction details will be available in the ESP secure site when you purchase the board(s).

The suggested power supply is completely conventional. Although a small amount of additional power can be obtained by using an auxiliary supply (to boost the rail voltage for the MOSFET drive stage), this is at the expense of greater complexity and more things to go wrong. The transformer for the supply should be matched to the expected power you wish to obtain from the amp. The following table shows the recommended transformer voltage and VA rating for a single channel - either use two transformers or a single unit with twice the VA rating shown for stereo.

AC VoltsDC Volts VAPower (8 ohms)
20-0-20+/-28V10040
25-0-25+/-35V10050
30-0-30+/-4216080
40-0-40+/-56V200150
50-0-50+/-70V300240

Note that all powers shown are "short term" or peak - continuous power will always be less as the supply collapses under load. Peak power levels are usually achieved (or approached) with most music because its transients are generally between 6dB and 10dB greater than the average power output. Transformer VA ratings shown are a guide only - larger or smaller units may be used, with a marginal increase or reduction of peak power. Always use at least the size shown for subwoofer use!

Fig 3
Figure 3 - Power Supply Circuit Diagram

Figure 3 shows the power supply circuit diagram for a ±56V supply, and there is nothing new about it. As I always recommend, the bridge rectifier should be a 400V/35A chassis mount type, and should be properly chassis mounted using heatsink compound.

Filter capacitors must be rated to at least the nominal supply voltage, and preferably higher. If possible, use 105°C rated caps, and join the earthed terminals very solidly to form the star earthing point.

Note - The fuse should be selected according to the size of the power transformer. For any toroidal transformer over 300VA, a soft start circuit is highly recommended. Use the transformer manufacturer's suggested fuse - if this information is not available, ask the supplier - not me!

The DC supply must be taken from the capacitor terminals - never from the bridge rectifier. Using several small capacitors will give better performance than a single large one, and is usually cheaper as well. For example, the performance of 10 x 1,000uF capacitors is a great deal better (in all respects) than a single 10,000uF cap, at between 50% to 70% of the cost of the large unit. This lunch is not free, but it is heavily discounted ;-)

When you purchase the PCB, you will not only get all component values, but will also have access to information for a power supply that is optimised for the best possible performance for a conventional supply. There is nothing especially innovative about the "advanced" supply schematic, but the overall results will surprise you.


Testing

Connect to a suitable power supply - remember that the supply earth (ground) must be connected! When powering up for the first time, use 10 ohm to 22 ohm "safety" resisors in series with each supply to limit the current if you have made a mistake in the wiring.

For a much more detailed description of the general test processes (as well as troubleshooting information if the amp does not work), please see Troubleshooting & Repair Guide. That article has much more detailed information than I can include in each project page.

http://sound.westhost.com




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marți, 20 ianuarie 2009

Schema amplificator 2x0,5kW



Wzmacniacz mocy 2x0,5kW


Firma Tripath zajmująca się wzmacniaczami klasy D opracowała własną technologię obróbki sygnału Digital Power Processing (DPPTM) i wypuściła na rynek układy sterujące pozwalające na budowę wzmacniaczy w nowej klasie T (nazwa klasy T pochodzi najprawdopodobniej od nazwy firmy).
Wzmacniacze klasy T łączą w sobie jakość dźwięku uzyskiwaną w klasie AB z wysoką sprawnością uzyskiwaną w klasie D.
Układ TA0104A jest takim właśnie układem sterującym, który umożliwia zbudowanie wzmacniacza klasy T. Zasada działania wzmacniaczy klasy T jest podobna do wzmacniaczy impulsowych, czyli sygnał wyjściowy jest ciągiem impulsów o modulowanym wypełnieniu, z tą różnicą, że zmianie ulega również częstotliwość nośna. Częstotliwość nośna podlega zmianie w zależności od wielkości sygnału. Według danych katalogowych firmy Tripath, dla małych sygnałów częstotliwość ta wynosi ok. 1,5MHz i spada przy dużych sygnałach do 200kHz. Uzależnienie częstotliwości nośnej od wielkości sygnału powoduje, że wzmacniacze klasy T nie zniekształcają tak sygnału jak to ma miejsce w klasie D i ich pasmo jest porównywalne z pasmem wzmacniaczy klasy A lub AB.
Schemat ideowy wzmacniacza przedstawiony jest na
rys.1. Sercem całego układu jest oczywiście układ U1. Sygnały wejściowe IN1 i IN2 (złącze J4) są doprowadzone poprzez filtry wejściowe do wejść IN1 i IN2 układu U1.
Rezystory R23 i R24 (R
IN) ustalają wzmocnienie odpowiednio dla obu kanałów. Konstruktorzy z Tripath zalecają ustawić wzmocnienie na wartość 14,5 (23dB) co zapewnione jest przy wartościach rezystorów równych 49,9kW. Wzór, który przedstawia wzajemną zależność wzmocnienia Av i RIN wygląda następująco
Av=800·10
3/(RIN+5000)

gdzie R
IN podaje się w Ohmach.
Kondensatory sprzęgające C22 i C23 (C
IN) oddzielają składową stałą i wspólnie z rezystorami R23 i R24 ustalają dolną częstotliwość graniczną Fp (przy -3dB) dla sygnału wejściowego. Wzór, który przedstawia zależność Fp, CIN oraz RIN wygląda następująco
F
p=1/((2p·CIN)·(RIN+5000))

gdzie R
IN podaje się w Ohmach, a CIN w faradach.
Do wejść IN1 i IN2 dołączony jest układ, w którym potencjometrami R18 i R22 ustala się napięcie na wejściach na wartość ok. 2,5V.
Układ TA0104A wyposażony jest również w system autodiagnostyki. O stanie układu informuje dioda LED D5, która jest sterowana z wyjścia HMUTE. Jeżeli dioda się świeci to oznacza właściwą pracę, gdy gaśnie to są niewłaściwe warunki pracy układu np. przeciążenie wyjścia lub przekroczenie wartości napięcia zasilania (zarówno od dołu jak i od góry).
W przypadku przeciążenia stopni wyjściowych ponowne załączenie wzmacniacza wymaga zmiany stanu wejścia MUTE w cyklu 0-1-0 lub wyłączenia i ponownego załączenia zasilania. W przypadku przekroczenia napięć zasilających wzmacniacz nie będzie pracował aż napięcia zasilające będą ponownie o właściwych wartościach.
Wejście MUTE służy do wyciszania wzmacniacza. Jeżeli na to wejście zostanie podany sygnał logicznej jedynki to wzmacniacz zostanie wyciszony, w chwilę po podaniu (200ms) na wejście sygnału o poziomie logicznego zera wzmacniacz będzie znowu w stanie normalnej pracy. Aby wzmacniacz był aktywny stale wystarczy zewrzeć styki 2-3 złącza J3.
Stopnie wyjściowe zbudowane są z par tranzystorów Q1,Q2 i Q3,Q4.

Tranzystory te dobiera się biorąc pod uwagę rezystancję dren-źródło w stanie włączenia RDS(ON), napięcie przebicia dren-źródło BVdss oraz ładunek gromadzony w bramce Qg. Najlepiej by było aby Qg i RDS(ON) były jak najmniejsze, gdyż ma to wpływ na szybkość przełączania i straty mocy. Są to jednak dwa sprzeczne warunki gdyż dla małej rezystancji RDS(ON) towarzyszy duży ładunek Qg. Poniżej znajduje się tabelka zawierająca dane tranzystorów, które były używane przez konstruktorów firmy Tripath do współpracy z TA0104A.

Tranzystor BVdss (V) Qg (nC) RDS(ON)(Ohm)
STW34NB20 200 80 0.075
STW38NB20 200 95 0.065
STW19NB20 200 40 0.18

Przy wyborze rezystorów zabezpieczających bramki tranzystorów (R1,R2,R9,R10) bierze się pod uwagę parametr Qg, który w połączeniu z tymi rezystorami ma wpływ na przełączanie tranzystorów. Tripath zaleca dla tranzystorów z Qg mniejszym niż 70nC stosowanie rezystorów o wartości 10W, a dla Qg większego niż 70nC stosowanie rezystorów o wartości 5,6W. Tranzystory wyjściowe są sterowane z układu procesora wbudowanego w układ TA0104A. Aby zoptymalizować jego pracę pod kątem szybkości przełączania tranzystorów należy skonfigurować go zworkami na złączach J1 i J2. Podczas przełączania par tranzystorów Q1, Q2 i Q3, Q4 procesor między cyklami włączania tranzystorów wstawia tzw. czas martwy (Break-Before-Make) kiedy to obydwa tranzystory powinny być wyłączone, co powinno zminimalizować straty energii, szczególnie przy wolniejszych tranzystorach. Prezentowany wzmacniacz ustawiony jest na 65ns. Poniżej znajduje się tabelka z konfiguracją zworek w zależności od czasu.

Zwarte styki J1 Zwarte styki J2 Czas martwy (ns)
1-2 1-2 145
1-2 2-3 105
2-3 1-2 65
2-3 2-3 25

Nazwa elementu Symbol Ilość
1µF 50V C22,C23 2
10µF 100V C29 1
82µF 25V C28 1
100µF 150V C3,C11,C16,C17 4
47pF 500V C5,C9 2
10nF 50V C24,C25,C26,C27
C33,C34,C35,C36
C37,C38
4
100nF 100V C1,C2,C6,C7,C8
C12,C13,C14,C15
C18,C19,C20,C21
13
220nF 100V C4,C10 2
0,01R 1W R3,R8,R11,R12 4
5,6R 1W R1,R2,R9,R10 4
33R 2W R5,R6 2
1k 1W R4,R7 2
2k 0,25W R15 1
10k 0,25W R13,R14,R16 3
49,9k 0,25W R23,R24 2
1M 0,25W R17,R19,R20,R21 4
Pot. 10k 0,25W R18,R22 2
MUR120 D1,D2,D3,D4 4
MBR150 D6 1
LED zielona D5 1
11,3µH 10A L1,L2 2
1µH L3,L4 2
1µH 10a L6,L7 2
330µH L5 1
STW38NB20 Q1,Q2,Q3,Q4 4
TA0104A U1 1
LM2594HVN-12 U2 1
Listwa 1X3 J1,J2,J3 3
Złącze ARK2 J4 2
Złącze ARK3 J5 2

Układ zabezpieczenia głośników

20k 0,25W R26 1
100k 0,25W R28,R30 2
220k 0,25W R25 1
1M 0,25W R27,R29 2
1µF 50V C30,C31,C32 3
MBR150 D7 1
BAT83 D8 1
1N4148 D9 1
BS170 Q5,Q6,Q7,Q9 4
BC557 Q8 1
Złącze ARK2 J6 2



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Schema amplificator 1000w





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miercuri, 14 ianuarie 2009

Cateva scheme de amplificator pe tranzistori








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